| PART |
Description |
Maker |
| RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
| FDD068AN03L FDU068AN03L FDD068AN03 |
N-Channel PowerTrench MOSFET 30V/ 35A/ 6.8m
N-Channel PowerTrench MOSFET 30V, 35A, 6.8mз
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| ATP201-TL-H ATP20112 ATP201 |
N-Channel Power MOSFET, 30V, 35A, 17mOhm, Single ATPAK
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| STD35NF3LLT4 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 35A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 35A条（丁）|52AA
|
STMicroelectronics N.V.
|
| 7MBR35SD120 |
PIM/Built-in converter with thyristor and brake (S series) 1200V / 35A / PIM
|
FUJI[Fuji Electric]
|
| IRF7458 IRF7458TR |
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)max=8.0mohm, Id=14A)
Power MOSFET(Vdss=30V/ Rds(on)max=8.0mohm/ Id=14A)
|
IRF[International Rectifier]
|
| RJK0652DPB RJK0652DPB-00-J5 RJK0652DPB-13 |
60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0856DPB-15 |
80V, 35A, 8.9m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| IRFU3707 IRFR3707 IRFR3707PBF IRFR3707TRR IRFU3707 |
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A?)
Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A)
Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A?
|
IRF[International Rectifier]
|
| DTB743EE09 |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
